Toshiba Memory Corporation Develops World's First 3D Flash Memory with TSV Technology
Toshiba Memory Corporation , the world leader in memory solutions, today announced development of the world’s first BiCS FLASH™ three-dimensional (3D) flash memory utilizing Through Silicon Via (TSV) technology with 3-bit-per-cell (triple-level cell, TLC) technology. Shipments of prototypes for development purposes started in June, and product samples are scheduled for release in the second half of 2017. The prototype of this groundbreaking device will be showcased at the 2017 Flash Memory Summit in Santa Clara, California, United States, from August 7-10.
This Smart News Release features multimedia. View the full release here: http://www.businesswire.com/news/home/20170710006538/en/
Devices fabricated with TSV technology have vertical electrodes and vias that pass through silicon dies to provide connections, an architecture that realizes high speed data input and output while reducing power consumption. Real-world performance has been proven previously, with the introduction of Toshiba’s 2D NAND Flash memory  .
Combining a 48-layer 3D flash process and TSV technology has allowed Toshiba Memory Corporation to successfully increase product programming bandwidth while achieving low power consumption. The power efficiency of a single package is approximately twice that of the same generation BiCS FLASH™ memory fabricated with wire-bonding technology. TSV BiCS FLASH™ also enables a 1-terabyte (TB) device with a 16-die stacked architecture in a single package.
Toshiba Memory Corporation will commercialize BiCS FLASH™ with TSV technology to provide an ideal solution in respect for storage applications requiring low latency, high bandwidth and high IOPS /Watt, including high-end enterprise SSDs.
General Specifications (Prototype)
|Package Type||NAND Dual x8 BGA-152|
|Storage Capacity||512 GB||1 TB|
|Number of Stacks||8||16|
|External Dimension||W||14 mm||14 mm|
|D||18 mm||18 mm|
|H||1.35 mm||1.85 mm|
|Interface Max. Speed||1066Mbps|
 Source: Toshiba Memory Corporation, as of July 11, 2017.
 A structure stacking Flash memory cells vertically on a silicon substrate to realize significant density improvements over planar NAND Flash memory, where cells are formed on the silicon substrate.
 Through Silicon Via: the technology which has vertical electrodes and vias to pass through the silicon dies for connection in a single package.
 “Toshiba Develops World’s First 16-die Stacked NAND Flash Memory with TSV Technology”
 The rate of data transfer rate per power unit. (MB/s/W)
 Compared with Toshiba Memory Corporation’s current products.
 Input Output per Second: The number of data inputs and outputs for processing through an I/O port per second. A higher value represents better performance.
Toshiba Memory Corporation
Kota Yamaji, +81-3-3457-3473
Business Planning Division
Information om Business Wire
101 California Street, 20th Floor
CA 94111 San Francisco
Følg pressemeddelelser fra Business Wire
Ved at skrive dig op her, vil du modtage pressemeddelelser på mail når de udsendes. Indtast din mail og følg instruktionerne. Det er ligeså let at melde sig fra igen.
Flere pressemeddelelser fra Business Wire
PASTBOOK21.9.2017 10:02 | pressemeddelelse
PastBook Raises $2 Million to Scale-Up its One-Click Photo Books Platform
NY-GTIS-PARTNERS20.9.2017 15:34 | pressemeddelelse
GTIS Partners Clinches Sustainability Performance Top Honors for Third Year Running
PA-MEET-GROUP20.9.2017 14:33 | pressemeddelelse
The Meet Group to Acquire LOVOO
ARTHUR-D.-LITTLE20.9.2017 13:02 | pressemeddelelse
Arthur D. Little Urges Network Operators to Prepare for Next-Generation Internet of the GigaWorld
LINTEC-CORPORATION20.9.2017 12:47 | pressemeddelelse
LINTEC Announces Four New Adhesive Materials for Labels
QUINTIQ20.9.2017 12:07 | pressemeddelelse
EGS Invests in Artificial Intelligence from Quintiq
I vores nyhedsrum kan du læse alle vores pressemeddelelser, tilgå materiale i form af billeder og dokumenter, og finde vores kontaktoplysninger.Besøg vores nyhedsrum