Kioxia Commences Sample Shipments of 10th-Generation BiCS FLASH™ Devices Delivering High Performance, High Capacity and Low Power Consumption

Production planned at Fab2 of Kitakami Plant

Kioxia Corporation, a world leader in memory solutions, today announced that it has commenced sample shipments of 1Tb (terabit) Triple-Level-Cell (TLC) memory devices utilizing its 10th-generation BiCS FLASH™ 3D flash memory technology.¹ These will be primarily integrated into the company’s enterprise and data center SSDs, strengthening Kioxia’s lineup to meet the growing demand for AI storage, which requires higher performance, higher capacity, and lower power consumption. These new products will be manufactured using state-of-the-art equipment at Kioxia’s Kitakami Plant Fab2 facility in Iwate Prefecture, Japan.

By leveraging innovative CMOS directly Bonded to Array (CBA) technology² and On-Pitch Select Gate Drain (OPS) technology,³ both adopted since the 8th-generation BiCS FLASH™, the 10th-generation technology achieves a NAND interface speed of 4.8 Gb/s,⁴ a 33% improvement over the 8th generation. Bit density has increased by 59% by stacking 332 layers and improving lateral density. Additionally, write and read power efficiencies have improved by 18% and 30% respectively,⁵ helping to reduce power consumption in data centers and enterprise infrastructure.

Under its unique dual-axis strategy, Kioxia is simultaneously advancing two distinct product lines: its 9th-generation solutions, which deliver high performance at relatively low cost of investing, and its 10th-generation technology, which leverages advanced layer stacking to achieve massive capacity and superior performance.

Guided by its mission of “uplifting the world with ‘memory,’” Kioxia remains committed to driving technological innovation, strengthening global partnerships, and delivering the advanced storage solutions that power modern AI infrastructure.

1. These samples are for the functional check purpose and the specifications of the samples may differ in mass production.
2. Technology wherein each CMOS wafer and cell array wafer is manufactured separately in their optimized conditions and then bonded together.
3. Technology that makes it possible to shorten the bit line and reduce the word line capacitance by removing unused memory holes.
4. 1Gb/s is calculated as 1,000,000,000bits/second. This value is obtained in a specific test environment at Kioxia Corporation, and may vary depending on use conditions.
5. Power efficiency during data transfer was also included.

Notes:

• Product density is identified based on the density of memory chip(s) within the product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be lower due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. 1Gb = 2^30 bits = 1,073,741,824 bits.
• Read and write speeds are the best values obtained in a specific test environment at Kioxia Corporation; the company warrants neither read nor write speeds in individual devices. Read and write speeds may vary depending on the device used.
• Company names, product names and service names may be trademarks of their respective companies.
  

• This announcement has been prepared to provide information on our business and does not constitute or form part of an offer or invitation to sell or a solicitation of an offer to buy or subscribe for or otherwise acquire any securities in any jurisdiction or an inducement to engage in investment activity nor shall it form the basis of or be relied on in connection with any contract thereof.
• Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

About Kioxia

Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with “memory” by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems.

View source version on businesswire.com: https://www.businesswire.com/news/home/20260702318192/en/