Applied Materials

TechnologyTechnologyTechnology Hardware & Equipment
    
      PhotomasksEUV LithographyLithography

    


  * New photomask etch technology meets unique manufacturing challenges at 16nm
    and beyond
  * System solves two major requirements of EUVL pattern transfer: pattern
    accuracy and defect performance
  * Multiple systems installed at leading mask makers to enable the EUVL
    inflection


SANTA CLARA, Calif., September 19, 2011 - Applied Materials, Inc. today advanced
the state-of-the art in photomask technology with its new Applied Centura(®)
Tetra(TM) EUV Advanced Reticle Etch system. Overcoming a major hurdle to the
adoption of EUV(1) lithography, the new Tetra EUV system solves the critical and
unmet challenge of etching the new EUVL photomasks with nanometer-level accuracy
and world-class defect performance to enable the fabrication of multiple new
generations of high-performance semiconductor chips.

"Our new Tetra EUV system expands the capabilities of Applied's industry-
standard Tetra etch platform, which is used by the great majority of advanced
mask makers today," said Ajay Kumar, vice president and general manager of the
Mask and TSV(2) Etch product division at Applied Materials. "Applied continues
to invest in technologies that are important to our customers and will enable
next-generation design nodes. We have already shipped multiple systems and we
are working closely with virtually every leading mask maker to help the
semiconductor industry accommodate this significant technology inflection."

EUVL photomasks are fundamentally different than conventional photomasks that
selectively transmit 193nm wavelength light to project circuit patterns onto the
wafer. At the 13.5nm wavelength used by EUVL, all photomask materials are
opaque, so the mask contains complex multi-layer mirrors to reflect circuit
patterns onto the wafer instead. The Tetra EUV system is designed to etch new
materials and complex layer stacks to meet the stringent pattern accuracy,
surface finish and defectivity specifications required to achieve high
lithography yields when operating in this reflected mode.

The Tetra EUV system is part of Applied Materials' comprehensive portfolio of
solutions to optimize the productivity and yield of its customers' photomask and
lithography operations. The system is supported by Applied Global Services, the
industry's most comprehensive service and support network, to maximize system
uptime - a vital priority for mask etch tools. For more information on Applied
Materials' lithography-enabling solutions, visit
www.appliedmaterials.com/advanced-litho.

Applied Materials, Inc. (Nasdaq:AMAT) is the global leader in providing
innovative equipment, services and software to enable the manufacture of
advanced semiconductor, flat panel display and solar photovoltaic products. Our
technologies help make innovations like smartphones, flat screen TVs and solar
panels more affordable and accessible to consumers and businesses around the
world. At Applied Materials, we turn today's innovations into the industries of
tomorrow. Learn more at www.appliedmaterials.com.

# # #

Contact:
Connie Duncan (editorial/media) 408.563.6209
Michael Sullivan (financial community) 408.986.7977

(1) EUV = extreme ultraviolet
(2) TSV = through-silicon via




A photomask exiting the Tetra EUV system: 
http://hugin.info/143724/R/1547411/474914.jpg

The Applied Centura Tetra EUV photomask etch system: 
http://hugin.info/143724/R/1547411/474913.jpg




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Source: Applied Materials via Thomson Reuters ONE

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